F. Shahedipour

Investigation of the formation of the 2.8 eV luminescence band in <i>p</i>-type GaN:Mg

F. Shahedipour, B. W. Wessels · Applied Physics Letters · 2000 · 113 citations

Wide-bandgap Semiconductor, Electrical Engineering, Photoluminescence +13

Al Ga1−N for solar-blind UV detectors

Peter Sandvik, Kan Mi, F. Shahedipour et al. · Journal of Crystal Growth · 2001 · 108 citations

Engineering, Al Ga1−n, Applied Physics +3

Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers

M. A. Reshchikov, F. Shahedipour, Roman Y. Korotkov et al. · Journal of Applied Physics · 2000 · 108 citations

Photoluminescence Band, Undoped Epitaxial Gan, Electrical Engineering +14

AlGaN devices and growth of device structures

Keith Jones, T. Paul Chow, Michael Wraback et al. · Journal of Materials Science · 2015 · 77 citations

Materials Engineering, Aluminium Nitride, Electrical Engineering +4

Efficient GaN photocathodes for low-level ultraviolet signal detection

F. Shahedipour, M. P. Ulmer, B. W. Wessels et al. · IEEE Journal of Quantum Electronics · 2002 · 52 citations

Photonics, Ultraviolet Light, Electrical Engineering +14