Investigation of the formation of the 2.8 eV luminescence band in <i>p</i>-type GaN:Mg

Abstract

The stability of defects present in GaN:Mg has been investigated using photoluminescence (PL) spectroscopy. The two dominant defect-related PL emission bands in p-type GaN were investigated, the blue band at 2.8 eV and the ultraviolet (UV) emission band at 3.27 eV. The intensity of the 3.27 eV PL band increases with increasing resistivity, whereas the 2.8 eV PL band intensity increases with a decrease in resistivity. The luminescence data is explained by a model whereby the concentration of luminescent centers depends on the Fermi level position. The shallow donor responsible for the UV band is attributed to hydrogen, whereas the deep donor defect responsible for the 2.8 eV band is attributed to a nitrogen vacancy complex.