A. Usikov

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

M. A. Reshchikov, D. O. Demchenko, A. Usikov et al. · Physical Review B · 2014 · 184 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Quantum dot origin of luminescence in InGaN-GaN structures

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann et al. · Physical review. B, Condensed matter · 2002 · 110 citations

Engineering, Materials Engineering, Materials Science +17

Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN

M. A. Reshchikov, Alexander Kvasov, Marilyn F. Bishop et al. · Physical Review B · 2011 · 104 citations

Engineering, Materials Engineering, Materials Science +17

Evaluation of the concentration of point defects in GaN

M. A. Reshchikov, A. Usikov, H. Helava et al. · Scientific Reports · 2017 · 82 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +15

Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

I. L. Krestnikov, W. V. Lundin, A. V. Sakharov et al. · Applied Physics Letters · 1999 · 81 citations

Engineering, Materials Engineering, Materials Science +17