H. Helava - Concepedia

Author

H. Helava

Nitride Crystals (United States)

Also Known As

H Helava, H I Helava, H. Helava, H. I. Helava, H.I. Helava, Heikki Helava, Heikki I. Helava, M.G. Ramm

101

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

Nitride Crystals (United States)Virginia Commonwealth University ITMO University Saint Petersburg State Electrotechnical University Ural Institute of Metals

About

H. Helava is an author at Nitride Crystals (United States) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	29	1.2K
2	Applied Physics	20	27	1.1K
3	Natural Sciences	3	3	146
4	Chemistry	3	3	74
5	Health Sciences	1	1	27

H. Helava

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
Carbon defects as sources of the green and yellow luminescence bands in undoped GaN M. A. Reshchikov, D. O. Demchenko, A. Usikov, Physical Review B Wide-bandgap SemiconductorGl BandPhotoluminescenceEngineeringYellow Luminescence	2014	182
Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition F. A. Ponce, D. P. Bour, Werner Götz, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorAluminium NitrideEpitaxial GrowthEngineering	1996	107
Sublimation growth of AlN bulk crystals in Ta crucibles E. N. Mokhov, O.V. Avdeev, I. S. Barash, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCrystal MaterialCrystal Growth Technology	2005	95
Evaluation of the concentration of point defects in GaN M. A. Reshchikov, A. Usikov, H. Helava, Scientific Reports	2017	77
Experimental and theoretical analysis of sublimation growth of AlN bulk crystals Yu.N. Makarov, O.V. Avdeev, I. S. Barash, Journal of Crystal Growth Materials ScienceAluminium NitrideTheoretical AnalysisEngineeringPhysics	2007	72
High-Density Discharges in the Alcator Tokamak M.P.J. Gaudreau, A. Gondhalekar, M.H. Hughes, Physical Review Letters Electrical EngineeringEnergy-confinement PropertiesEngineeringPhysicsNatural Sciences	1977	70
Two yellow luminescence bands in undoped GaN M. A. Reshchikov, J. D. McNamara, H. Helava, Scientific Reports	2018	70
Zero-phonon line and fine structure of the yellow luminescence band in GaN M. A. Reshchikov, J. D. McNamara, Fan Zhang, Physical review. B./Physical review. B Wide-bandgap SemiconductorEngineeringFine StructureOptical PropertiesNanoelectronics	2016	65
Fine structure of the red luminescence band in undoped GaN M. A. Reshchikov, A. Usikov, H. Helava, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceEngineeringThick Gan Layers	2014	52
Sublimation growth of 2 inch diameter bulk AlN crystals T. Yu. Chemekova, O.V. Avdeev, I. S. Barash, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials EngineeringMaterials ScienceAluminium NitrideDiameter CrystalsEngineering	2008	52

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