E. N. Mokhov

Silicon carbide light-emitting diode as a prospective room temperature source for single photons

F. Fuchs, V. A. Soltamov, Stefan Väth et al. · Scientific Reports · 2013 · 130 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum

Yu. A. Vodakov, E. N. Mokhov, M.G. Ramm et al. · Kristall und Technik · 1979 · 112 citations

Natural Sciences, Materials Engineering, Materials Science +17

Sublimation growth of AlN bulk crystals in Ta crucibles

E. N. Mokhov, O.V. Avdeev, I. S. Barash et al. · Journal of Crystal Growth · 2005 · 95 citations

Natural Sciences, Materials Engineering, Materials Science +15

Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers

Yu. A. Vodakov, A. D. Roenkov, M.G. Ramm et al. · physica status solidi (b) · 1997 · 89 citations

Natural Sciences, Materials Engineering, Materials Science +13

EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide

P. G. Baranov, I. V. Il’in, E. N. Mokhov et al. · Journal of Experimental and Theoretical Physics Letters · 2005 · 85 citations

Natural Sciences, Chemistry, Materials Science +12