Yu. A. Vodakov

Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum

Yu. A. Vodakov, E. N. Mokhov, M.G. Ramm et al. · Kristall und Technik · 1979 · 112 citations

Natural Sciences, Materials Engineering, Materials Science +17

Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers

Yu. A. Vodakov, A. D. Roenkov, M.G. Ramm et al. · physica status solidi (b) · 1997 · 89 citations

Natural Sciences, Materials Engineering, Materials Science +13

On mechanisms of sublimation growth of AlN bulk crystals

A.S. Segal, S. Yu. Karpov, Yu.N. Makarov et al. · Journal of Crystal Growth · 2000 · 74 citations

Natural Sciences, Materials Engineering, Materials Science +14

Experimental and theoretical analysis of sublimation growth of AlN bulk crystals

Yu.N. Makarov, O.V. Avdeev, I. S. Barash et al. · Journal of Crystal Growth · 2007 · 72 citations

Natural Sciences, Materials Engineering, Materials Science +16

Analysis of sublimation growth of bulk SiC crystals in tantalum container

S. Yu. Karpov, A.V. Kulik, I.A. Zhmakin et al. · Journal of Crystal Growth · 2000 · 53 citations

Natural Sciences, Materials Engineering, Materials Science +16