Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers

Abstract

Analysis of specific features of sublimation growth of bulk SiC crystals in presence of Ta is performed. Control of doping and formation of different SiC polytypes is discussed. Description of mechanisms responsible for generation of micropipes during sublimation growth of bulk crystals is given. It is shown that use of Ta is promising for growth of bulk SiC crystals.