Epitaxial growth of silicon carbide layers by sublimation „sandwich method” (I) growth kinetics in vacuum

Abstract

Abstract The growth kinetics of SiC epitaxial layers has been investigated by sublimation sandwich‐method in vacuum at temperature range from 1600 to 2100°C. The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retarding of SiC epitaxial layers growth due to the decreasing of evaporation coefficient by a factor of 10 1 –10 2 and more. The impurities introduced into the system at low supersaturations and temperatures, especially rare‐earth elements, Al, B, Cr reduce as a rule evaporation and condensation coefficients and therefore the growth rate of epitaxial layers.