I. L. Krestnikov - Concepedia

Author

I. L. Krestnikov

Also Known As

I L Krestnikov, I. L. KRESTNIKOV, I. L. Krestnikov, I.L Krestnikov, I.L. Krestnikov, Igor L Krestnikov, Igor L. Krestnikov, И.Л. Крестников

129

Publications

Citations

H-Index

Concepts

All Affiliations

Technische Universität Berlin Physico-Technical Institute Innolume (Germany)Karlsruhe Institute of Technology Russian Academy of Sciences

About

I. L. Krestnikov is an author at Technische Universität Berlin specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	47	2.6K
2	Applied Physics	26	45	2.5K
3	Electrical Engineering	12	12	808
4	Natural Sciences	1	1	45
5	Chemistry	1	1	45

I. L. Krestnikov

Publications

2.8K

Citations

H-Index

Page 1

	Year	Citations
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm V. M. Ustinov, N. A. Maleev, A. E. Zhukov, Applied Physics Letters Optical MaterialsEngineeringLateral SizeOptoelectronic DevicesIngaas Quantum	1999	377
The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers Sasan Fathpour, Zetian Mi, P. Bhattacharya, Applied Physics Letters P-doped 1.3Categoryquantum ElectronicsQuantum PhotonicsAuger RecombinationEngineering	2004	246
High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers S. S. Mikhrin, A. R. Kovsh, I. L. Krestnikov, Semiconductor Science and Technology PhotonicsElectrical EngineeringEngineeringLaser ScienceQuantum Device	2005	149
Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix M. Straßburg, V. Kutzer, Udo W. Pohl, Applied Physics Letters Quantum Lattice SystemBiexcitonic WaveguidingEngineeringMany-body Quantum PhysicSemiconductor Nanostructures	1998	138
Quantum dot origin of luminescence in InGaN-GaN structures I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, Physical review. B, Condensed matter PhotonicsPhotoluminescenceEngineeringPhysicsQuantum Dot Nature	2002	108
Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, physica status solidi (a) EngineeringUltrathin InsertionsSemiconductorsIi-vi SemiconductorTwo-dimensional Islands Formed	2001	98
Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth F. Hopfer, A. Mutig, M. Küntz, Applied Physics Letters PhotonicsHigh Modulation BandwidthQuantum PhotonicsStacked SubmonolayerEngineering	2006	96
Femtosecond high-power quantum dot vertical external cavity surface emitting laser Martin Hoffmann, Oliver M. Sieber, Valentin J. Wittwer, Optics Express Quantum PhotonicsEngineeringLaser ScienceCavity QedLaser Applications	2011	94
Ground state exciton lasing in CdSe submonolayers inserted in a ZnSe matrix N. N. Ledentsov, I. L. Krestnikov, M. V. Maximov, Applied Physics Letters Optical MaterialsEngineeringGround State ExcitonOptoelectronic DevicesSemiconductor Nanostructures	1996	89
Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser I. L. Krestnikov, W. V. Lundin, A. V. Sakharov, Applied Physics Letters PhotonicsPossible Vertical LasingEngineeringRoom-temperature Surface-mode LasingApplied Physics	1999	81

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