I. L. Krestnikov

InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm

V. M. Ustinov, N. A. Maleev, A. E. Zhukov et al. · Applied Physics Letters · 1999 · 378 citations

Engineering, Electrical Engineering, Materials Science +13

The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers

Sasan Fathpour, Zetian Mi, P. Bhattacharya et al. · Applied Physics Letters · 2004 · 248 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers

S. S. Mikhrin, A. R. Kovsh, I. L. Krestnikov et al. · Semiconductor Science and Technology · 2005 · 149 citations

Engineering, Electrical Engineering, Materials Science +17

Gain studies of (Cd, Zn)Se quantum islands in a ZnSe matrix

M. Straßburg, V. Kutzer, Udo W. Pohl et al. · Applied Physics Letters · 1998 · 138 citations

Natural Sciences, Materials Engineering, Materials Science +17

Quantum dot origin of luminescence in InGaN-GaN structures

I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann et al. · Physical review. B, Condensed matter · 2002 · 110 citations

Engineering, Materials Engineering, Materials Science +17