N.I. Kuznetsov

Electric breakdown in GaN <i>p-n</i> junctions

V. Dmitriev, K. G. Irvine, C. H. Carter et al. · Applied Physics Letters · 1996 · 113 citations

Semiconductors, Electrical Engineering, Engineering +12

Schottky barriers on n-GaN grown on SiC

Elena Kalinina, N.I. Kuznetsov, V. Dmitriev et al. · Journal of Electronic Materials · 1996 · 99 citations

Electrical Engineering, Engineering, Schottky Barriers +2

Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

N.I. Kuznetsov, A. E. Nikolaev, A. S. Zubrilov et al. · Applied Physics Letters · 1999 · 63 citations

Materials Engineering, Semiconductors, Electrical Engineering +13

Strain relaxation in GaN layers grown on porous GaN sublayers

M. G. Mynbaeva, A. N. Titkov, A. Kryzhanovski et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 53 citations · Full text

Automated laser excited atomic fluorescence spectrometer for determination of trace concentrations of elements

Boris V. Arkhangelskii, Mikhail A. Bolshov, V V Ermolov et al. · Spectrochimica Acta Part B Atomic Spectroscopy · 1989 · 46 citations

Chemical Engineering, Engineering, Atomic Emission Spectroscopy +13