A. E. Nikolaev

Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

N.I. Kuznetsov, A. E. Nikolaev, A. S. Zubrilov et al. · Applied Physics Letters · 1999 · 63 citations

Materials Engineering, Semiconductors, Electrical Engineering +13

Hydrogen effects in III-nitride MOVPE

E.V. Yakovlev, A.S. Segal, A.V. Lobanova et al. · Journal of Crystal Growth · 2008 · 49 citations

Engineering, Hydrogen Transition, Hydrogen Effects +4

X-ray determination of threading dislocation densities in GaN/Al2O3(0001) films grown by metalorganic vapor phase epitaxy

Viktor S. Kopp, Vladimir M. Kaganer, W. V. Lundin et al. · Journal of Applied Physics · 2014 · 40 citations · Full text

Aluminium Nitride, Engineering, X-ray Diffraction Profiles +16

Fermi level dependence of hydrogen diffusivity in GaN

A. Y. Polyakov, N. B. Smirnov, S. J. Pearton et al. · Applied Physics Letters · 2001 · 37 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +11

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov et al. · Journal of Crystal Growth · 2010 · 35 citations

Photonics, Quantum Science, Electrical Engineering +9