A. S. Zubrilov

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

N. I. Bochkareva, V. V. VORONENKOV, R. I. Gorbunov et al. · Applied Physics Letters · 2010 · 89 citations

Engineering, Electrical Engineering, Materials Science +17

Spontaneous and stimulated emission from photopumped GaN grown on SiC

A. S. Zubrilov, D. Tsvetkov, V. Dmitriev et al. · Applied Physics Letters · 1995 · 88 citations

Engineering, Materials Engineering, Materials Science +17

Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates

N.I. Kuznetsov, A. E. Nikolaev, A. S. Zubrilov et al. · Applied Physics Letters · 1999 · 63 citations

Engineering, Electrical Engineering, Materials Science +17

Strain relaxation in GaN layers grown on porous GaN sublayers

M. G. Mynbaeva, A. N. Titkov, A. Kryzhanovski et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 54 citations · Full text

Engineering, Materials Engineering, Materials Science +15

Deep centers and electroluminescence in 4HSiC diodes with a p-type base region

N.I. Kuznetsov, A. S. Zubrilov · Materials Science and Engineering B · 1995 · 41 citations

Engineering, Electrical Engineering, Materials Science +11