Concepedia

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov, E. E. Zavarin, G. A. Valkovskiy, M. A. Yagovkina, S. O. Usov, N. V. Kryzhanovskaya, V. S. Sizov, P. N. Brunkov,

Journal of Crystal Growth · 2010 · 37 citations · 10 references

DOI

Concepts

References

10

Quantitative measurement of displacement and strain fields from HREM micrographs

Martin Hÿtch, E. Snoeck, R. Kilaas · Ultramicroscopy · 1998 · 2.7K citations

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Auger recombination rates in nitrides from first principles

Kris T. Delaney, Patrick Rinke, Chris G. Van de Walle · Applied Physics Letters · 2009 · 352 citations · Full text

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Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

T. M. Smeeton, Menno J. Kappers, J. S. Barnard et al. · Applied Physics Letters · 2003 · 260 citations · Full text

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Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm

Kuniyoshi Okamoto, Junich Kashiwagi, Taketoshi Tanaka et al. · Applied Physics Letters · 2009 · 158 citations

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True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on<i>c</i>-Plane GaN

Adrian Avramescu, Teresa Lermer, Jens Müller et al. · Applied Physics Express · 2010 · 140 citations

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