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True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on<i>c</i>-Plane GaN
140
Citations
8
References
2010
Year
Wide-bandgap SemiconductorPhotonicsElectrical EngineeringPlug EfficiencyEngineeringSemiconductor LasersOptoelectronic MaterialsApplied PhysicsLaser ApplicationsLaser MaterialGan Power DeviceGreen LasersCategoryiii-v SemiconductorOptoelectronicsHigh-power LasersCompound SemiconductorRidge Laser
We pushed direct green laser diodes towards longer wavelengths at 524–532 nm based on improvements of epitaxial design and material quality on c-plane GaN substrate. Mounted ridge laser diodes show significant performance improvement in cw operation. For 524 nm laser, wall plug efficiency up to 2.3% at 50 mW optical output power is achieved. In pulse mode operation we demonstrate broad-area test lasers with an emission wavelength of 531.7 nm. Nonpolar and polar substrates are compared with respect to indium content in InGaN quantum wells. The limiting factors for achieving longer wavelengths and better performance of green lasers are discussed from this viewpoint.
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