Stephan Lutgen

Composition mapping in InGaN by scanning transmission electron microscopy

Andreas Rosenauer, Thorsten Mehrtens, Knut Müller‐Caspary et al. · Ultramicroscopy · 2011 · 171 citations

Materials Science, Engineering, Electron Microscopy +6

500 nm electrically driven InGaN based laser diodes

Desirée Queren, Adrian Avramescu, G. Brüderl et al. · Applied Physics Letters · 2009 · 149 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +13

True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on<i>c</i>-Plane GaN

Adrian Avramescu, Teresa Lermer, Jens Müller et al. · Applied Physics Express · 2010 · 140 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14

InGaN laser diodes with 50 mW output power emitting at 515 nm

Adrian Avramescu, Teresa Lermer, Jens Müller et al. · Applied Physics Letters · 2009 · 120 citations

Photonics, Electrical Engineering, Solid-state Lighting +15

On the origin of IQE‐‘droop’ in InGaN LEDs

A. Laubsch, M. Sabathil, Werner Bergbauer et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2009 · 113 citations

Engineering, Optoelectronic Devices, Ingan Leds +17