S. O. Usov

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov et al. · Journal of Crystal Growth · 2010 · 37 citations

Engineering, Electrical Engineering, Physics +16

Investigation of Statistical Broadening in InGaN Alloys

D S Arteev, A. V. Sakharov, E. E. Zavarin et al. · Journal of Physics Conference Series · 2018 · 20 citations · Full text

Natural Sciences, Materials Science, Physics +17

Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs

A. V. Sakharov, W. V. Lundin, E. E. Zavarin et al. · Semiconductors · 2009 · 17 citations

Engineering, Electrical Engineering, Materials Science +16

effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

A. F. Tsatsul’nikov, W. V. Lundin, E. E. Zavarin et al. · Semiconductors · 2016 · 17 citations

Engineering, Materials Engineering, Materials Science +14

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes

Daniele Barettin, Matthias Auf der Maur, Aldo Di Carlo et al. · Nanotechnology · 2016 · 17 citations

Engineering, Materials Science, Physics +17