Journal of Physics Conference Series · 2018 · 20 citations · 4 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptical MaterialsSpectroscopyIii-v SemiconductorsOptical Properties Of SemiconductorsOptical Properties Of SolidsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsAlloy SemiconductorsLinewidth BroadeningLinewidth NarrowingOptical TransmissionPhotoluminescencePhotoluminescence SpectroscopySemiconductor CharacterizationX-ray Diffraction Analysis
Optical and structural properties of thick InGaN layers grown by MOCVD and MBE were studied by photoluminescence, optical transmission and Raman spectroscopies and X-ray diffraction analysis. Optical bandgap, Urbach energy, and full widths at half maximum (FWHM) of photoluminescence and Raman spectra depending on the InGaN alloy composition were determined experimentally. Minimal theoretical linewidth of photoluminescence spectra resulted from random distribution of In and Ga atoms in cation sublattice was calculated.
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Band Gap of Hexagonal InN and InGaN Alloys
V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev et al. · physica status solidi (b) · 2002 · 307 citations · Full text
Local structure of luminescent InGaN alloys
V. Kachkanov, K.P. O’Donnell, Robert Martin et al. · Applied Physics Letters · 2006 · 24 citations
Natural Sciences, Materials Engineering, Materials Science +15