Menno J. Kappers - Concepedia

Author

Menno J. Kappers

Also Known As

Kappers, Kappers, M, Kappers, M.J., Kappers, MJ, Kappers, Menno, Kappers, Menno J., M J Kappers, M Kappers, M. J. Kappers, M. Kappers

383

Publications

8.2K

Citations

H-Index

Concepts

All Affiliations

University of Cambridge University of Manchester University of Oxford University of Strathclyde Cardiff University

About

Menno J. Kappers is an author at University of Cambridge specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	48	160	6.7K
2	Engineering	47	158	6.7K
3	Natural Sciences	10	10	547
4	Chemical Engineering	4	4	78
5	Medicine	2	2	42

Menno J. Kappers

181

Publications

7.3K

Citations

H-Index

Page 1

	Year	Citations
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope T. M. Smeeton, Menno J. Kappers, J. S. Barnard, Applied Physics Letters SemiconductorsMaterials ScienceEngineeringElectron MicroscopyPhysics	2003	259
Critical thickness calculations for InGaN/GaN David Holec, Pedro M. F. J. Costa, Menno J. Kappers, Journal of Crystal Growth Materials EngineeringEngineeringPhysicsApplied PhysicsAluminum Gallium Nitride	2007	219
Defect‐Induced Ferromagnetism in Co‐doped ZnO Neeraj Khare, Menno J. Kappers, Ming Wei, Advanced Materials Novel Soft-solution TechniqueEngineeringCrystal Growth TechnologyMagnetismQuantum Materials	2006	218
Optical and microstructural studies of InGaN∕GaN single-quantum-well structures D. M. Graham, A. Soltani-Vala, P. Dawson, Journal of Applied Physics SemiconductorsPhotonicsCategoryquantum ElectronicsPhotoluminescenceIndium Fractions	2005	210
Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering M. J. Galtrey, Rachel A. Oliver, Menno J. Kappers, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertyElectronic Structure	2007	167
InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal Rachel A. Oliver, G. Andrew D. Briggs, Menno J. Kappers, Applied Physics Letters EngineeringGan Buffer LayerSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor	2003	140
On the origin of threading dislocations in GaN films M. A. Moram, C. S. Ghedia, D.V. Sridhara Rao, Journal of Applied Physics Materials ScienceSemiconductorsUniform LuminescenceWide-bandgap SemiconductorEngineering	2009	126
Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering M. E. Vickers, Menno J. Kappers, T. M. Smeeton, Journal of Applied Physics Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringThickness RatioEngineering	2003	119
Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 Rachel A. Oliver, Menno J. Kappers, Joy Sumner, Journal of Crystal Growth Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringPhysics	2006	117
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures Simon Hammersley, Duncan Watson‐Parris, P. Dawson, Journal of Applied Physics Wide-bandgap SemiconductorPhotonicsElectrical EngineeringSolid-state LightingEngineering	2012	116

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