Menno J. Kappers

Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

T. M. Smeeton, Menno J. Kappers, J. S. Barnard et al. · Applied Physics Letters · 2003 · 259 citations · Full text

Semiconductors, Materials Science, Engineering +14

Critical thickness calculations for InGaN/GaN

David Holec, Pedro M. F. J. Costa, Menno J. Kappers et al. · Journal of Crystal Growth · 2007 · 219 citations

Materials Engineering, Engineering, Physics +4

Defect‐Induced Ferromagnetism in Co‐doped ZnO

Neeraj Khare, Menno J. Kappers, Ming Wei et al. · Advanced Materials · 2006 · 218 citations

Novel Soft-solution Technique, Engineering, Crystal Growth Technology +16

Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

D. M. Graham, A. Soltani-Vala, P. Dawson et al. · Journal of Applied Physics · 2005 · 210 citations

Semiconductors, Photonics, Categoryquantum Electronics +14

Three-dimensional atom probe studies of an InxGa1−xN∕GaN multiple quantum well structure: Assessment of possible indium clustering

M. J. Galtrey, Rachel A. Oliver, Menno J. Kappers et al. · Applied Physics Letters · 2007 · 167 citations

Optical Materials, Engineering, Optoelectronic Devices +20