T. M. Smeeton

Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope

T. M. Smeeton, Menno J. Kappers, J. S. Barnard et al. · Applied Physics Letters · 2003 · 259 citations · Full text

Semiconductors, Materials Science, Engineering +14

Optical and microstructural studies of InGaN∕GaN single-quantum-well structures

D. M. Graham, A. Soltani-Vala, P. Dawson et al. · Journal of Applied Physics · 2005 · 210 citations

Semiconductors, Photonics, Categoryquantum Electronics +14

Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering

M. E. Vickers, Menno J. Kappers, T. M. Smeeton et al. · Journal of Applied Physics · 2003 · 119 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +14

In-plane imperfections in GaN studied by x-ray diffraction

M. E. Vickers, Menno J. Kappers, Ranjan Datta et al. · Journal of Physics D Applied Physics · 2005 · 94 citations

Engineering, Microscopy, Gan Films +20

The impact of electron beam damage on the detection of indium-rich localisation centres in InGaN quantum wells using transmission electron microscopy

T. M. Smeeton, C. J. Humphreys, J. S. Barnard et al. · Journal of Materials Science · 2006 · 48 citations

Engineering, Electron Microscopy, Physics +10