C. H. Carter

Electric breakdown in GaN <i>p-n</i> junctions

V. Dmitriev, K. G. Irvine, C. H. Carter et al. · Applied Physics Letters · 1996 · 113 citations

Semiconductors, Electrical Engineering, Engineering +12

Direct evidence of micropipe-related pure superscrew dislocations in SiC

Xianrong Huang, Michael Dudley, William M. Vetter et al. · Applied Physics Letters · 1999 · 110 citations

X-ray Spectroscopy, Engineering, Mechanical Engineering +17

Schottky barriers on n-GaN grown on SiC

Elena Kalinina, N.I. Kuznetsov, V. Dmitriev et al. · Journal of Electronic Materials · 1996 · 99 citations

Electrical Engineering, Engineering, Schottky Barriers +2

Spontaneous and stimulated emission from photopumped GaN grown on SiC

A. S. Zubrilov, D. Tsvetkov, V. Dmitriev et al. · Applied Physics Letters · 1995 · 87 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14

High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

Jason R. Jenny, St.G. Müller, A. Powell et al. · Journal of Electronic Materials · 2002 · 75 citations

Materials Science, Materials Engineering, Engineering +4