A.K Kryganovskii

Structural characterization and strain relaxation in porous GaN layers

M. G. Mynbaeva, A. N. Titkov, A.K Kryganovskii et al. · Applied Physics Letters · 2000 · 93 citations

Natural Sciences, Materials Engineering, Materials Science +16

Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation

V. P. Evtikhiev, A. M. Boĭko, Igor Kudryashov et al. · Semiconductor Science and Technology · 2002 · 22 citations

Natural Sciences, Materials Engineering, Materials Science +17

Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy

A. F. Tsatsul’nikov, S. V. Ivanov, P. S. Kop’ev et al. · Microelectronic Engineering · 1998 · 14 citations

Natural Sciences, Materials Science, Physics +13

Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(001) surfaces misoriented to the [010] direction

V. P. Evtikhiev, Vadim Tokranov, A.K Kryganovskii et al. · Journal of Crystal Growth · 1999 · 13 citations

Engineering, Materials Engineering, Materials Science +11

Formation of InSb quantum dots in a GaSb matrix

A. F. Tsatsul’nikov, S. V. Ivanov, P. S. Kop’ev et al. · Journal of Electronic Materials · 1998 · 12 citations

Natural Sciences, Materials Science, Physics +12