I. L. Shul’pina

The physical foundations of the computer simulation of X-ray traverse topographs

P. V. Petrashen, F. N. Chukhovskiǐ, I. L. Shul’pina · Acta Crystallographica Section A · 1980 · 29 citations

X-ray Spectroscopy, Engineering, Computer-aided Design +22

Epitaxial growth of silicon carbide layers by sublimation “Sandwich method” (II) structural defects and growth mechanism

E. N. Mokhov, I. L. Shul’pina, A. S. Tregubova et al. · Kristall und Technik · 1981 · 26 citations

Materials Science, Materials Engineering, Perfect Sic Layers +14

Detection of dislocations in strongly absorbing crystals by projection X-ray topography in back reflection

I. L. Shul’pina, T. S. Argunova · Journal of Physics D Applied Physics · 1995 · 23 citations

X-ray Crystallography, X-ray Spectroscopy, Engineering +21

X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

I. L. Shul’pina, R. N. Kyutt, I. A. Prokhorov et al. · Technical Physics · 2010 · 18 citations

X-ray diffraction topography for materials science

I. L. Shul’pina, I. A. Prokhorov · Crystallography Reports · 2012 · 18 citations