N. M. Shmidt

Effects of proton implantation on electrical and recombination properties of n-GaN

A. Y. Polyakov, A. S. Usikov, B. Theys et al. · Solid-State Electronics · 2000 · 68 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +7

Point defects in gamma-irradiated n-GaN

V. V. Emtsev, V. Yu. Davydov, W. V. Lundin et al. · Semiconductor Science and Technology · 2000 · 45 citations

Semiconductors, Semiconductor Technology, Wide-bandgap Semiconductor +12

Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers

N. M. Shmidt, D. V. Davydov, V. V. Emtsev et al. · physica status solidi (b) · 1999 · 39 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +9

Radiation-induced defects in n-type GaN and InN

V. V. Emtsev, V. Yu. Davydov, E. E. Häller et al. · Physica B Condensed Matter · 2001 · 31 citations

Physics, Applied Physics, Gan Power Device +2

Electron accumulation layer at the Cs-covered GaN(0001) n-type surface

G. V. Benemanskaya, V. S. Vikhnin, N. M. Shmidt et al. · Applied Physics Letters · 2004 · 25 citations

Wide-bandgap Semiconductor, Electrical Engineering, Visible Light +14