G. V. Benemanskaya

Near-threshold enhancement in photoemission from alkali metal overlayers

A. Liebsch, G. V. Benemanskaya, M. N. Lapushkin · Surface Science · 1994 · 39 citations

Materials Science, Engineering, Nanotechnology +6

Electron accumulation layer at the Cs-covered GaN(0001) n-type surface

G. V. Benemanskaya, V. S. Vikhnin, N. M. Shmidt et al. · Applied Physics Letters · 2004 · 25 citations

Wide-bandgap Semiconductor, Electrical Engineering, Visible Light +14

Surface states and accumulation nanolayer induced by Ba and Cs adsorption on the n-GaN(0001) surface

G. V. Benemanskaya, M. N. Lapushkin, S. N. Timoshnev · Surface Science · 2009 · 21 citations

Materials Science, Surface Characterization, Cs Adsorption +10

Auger recombination in P-type GaSb

A. N. Titkov, G. V. Benemanskaya, Boris Gelmont et al. · Journal of Luminescence · 1981 · 20 citations

Auger Recombination, Engineering, Physics +3

Near-Fermi level surface states induced by Cs adsorption on the Si(111)7 × 7 surface

G. V. Benemanskaya, G. É. Frank-Kamenetskaya, M. N. Lapushkin · Surface Science · 1995 · 12 citations

Materials Science, Cs Adsorption, Engineering +6