Changes in electronic and adsorption properties under Cs adsorption on GaAs in the transition from As-rich to Ga-rich surface

Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy

D. K. Biegelsen, R. D. Bringans, John E. Northrup et al. · Physical review. B, Condensed matter · 1990 · 664 citations

Engineering, Microscopy, Electron Diffraction +16

Structures of As-Rich GaAs(001)-(2 × 4) Reconstructions

Tomihiro Hashizume, Q. K. Xue, Jing Zhou et al. · Physical Review Letters · 1994 · 288 citations

Semiconductors, Electrical Engineering, Engineering +15

Direct and Indirect Excitation Processes in Photoelectric Emission from Silicon

G. W. Gobeli, F. G. Allen · Physical Review · 1962 · 216 citations

Engineering, Silicon On Insulator, Electronic Excited State +17

High-resolution synchrotron-radiation core-level spectroscopy of decapped GaAs(100) surfaces

G. Le Lay, D. Mao, Antoine Kahn et al. · Physical review. B, Condensed matter · 1991 · 128 citations · Full text

Decapped Gaas, Engineering, Ga Dimers +18

Leed, aes and photoemission measurements of epitaxially grown GaAs(001), (111)A and (111)B surfaces and their behaviour upon cs adsorption

A.J. Van Bommel, J.E. Crombeen, T. G. J. van Oirschot · Surface Science · 1978 · 122 citations