Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy

D. K. Biegelsen, R. D. Bringans, John E. Northrup, +1

Physical review. B, Condensed matter

EngineeringMicroscopyElectron DiffractionGa-ga DimersSemiconductors +14

Reconstructions of GaAs(1¯ 1¯ 1¯) surfaces observed by scanning tunneling microscopy

D. K. Biegelsen, R. D. Bringans, John E. Northrup, +1

Physical Review Letters

SemiconductorsMaterials ScienceIi-vi SemiconductorTwo-layer Hexagonal RingEngineering +13

Silicon surface passivation by hydrogen termination: A comparative study of preparation methods

D. B. Fenner, D. K. Biegelsen, R. D. Bringans

Journal of Applied Physics

Oxygen ContaminationEngineeringWafer Surface OxideVacuum DeviceSilicon Surface Passivation +17

Symmetric arsenic dimers on the Si(100) surface

R. I. G. Uhrberg, R. D. Bringans, R. Z. Bachrach, +1

Physical Review Letters

Materials ScienceSurface CharacterizationEngineeringSymmetric As-as DimersPhysics +9

Photoemission study of the electronic structure of stoichiometric and substoichiometric TiN and ZrN

Hartmut Höchst, R. D. Bringans, P. Steiner, +1

Physical review. B, Condensed matter

EngineeringInorganic PhotochemistryZrn SamplesSolid-state ChemistryPhoto-electrochemical Cell +15

Electronic structure, atomic structure, and the passivated nature of the arsenic-terminated Si(111) surface

R. I. G. Uhrberg, R. D. Bringans, Marjorie A. Olmstead, +2

Physical review. B, Condensed matter

EngineeringAs-terminated SurfaceChemistrySilicon On InsulatorElectronic Structure +18

Arsenic overlayer on Si(111): Removal of surface reconstruction

Marjorie A. Olmstead, R. D. Bringans, R. I. G. Uhrberg, +1

Physical review. B, Condensed matter

Materials ScienceMaterials EngineeringSurface CharacterizationEngineeringPhysics +11

Surface bands for single-domain 2 × 1 reconstructed Si(100) and Si(100):As. Photoemission results for off-axis crystals

R. D. Bringans, R. I. G. Uhrberg, Marjorie A. Olmstead, +1

Physical review. B, Condensed matter

EngineeringSingle-domain 2Off-axis CrystalsSilicon On InsulatorSemiconductors +14

Arsenic-terminated Ge(111): An ideal 1×1 surface

R. D. Bringans, R. I. G. Uhrberg, R. Z. Bachrach, +1

Physical Review Letters

Materials ScienceSurface CharacterizationArsenic-terminated GeEngineeringPhysics +10

Interface formation of GaAs with Si(100), Si(111), and Ge(111): Core-level spectroscopy for monolayer coverages of GaAs, Ga, and As

R. D. Bringans, Marjorie A. Olmstead, R. I. G. Uhrberg, +1

Physical review. B, Condensed matter

Ga OverlayersEngineeringThin OverlayersIi-vi SemiconductorNanoelectronics +15