Symmetric arsenic dimers on the Si(100) surface

Abstract

Deposition of arsenic on Si(100) results in a well-ordered, highly passivated, and stable surface. From a comparison between angle-resolved photoemission data and ab initio pseudopotential calculations we conclude that the observed 2\ifmmode\times\else\texttimes\fi{}1 reconstruction is caused by the formation of symmetric As-As dimers on the surface. The calculated surface band dispersion for this model is in excellent agreement with experiment.