D. K. Biegelsen

Surface reconstructions of GaAs(100) observed by scanning tunneling microscopy

D. K. Biegelsen, R. D. Bringans, John E. Northrup et al. · Physical review. B, Condensed matter · 1990 · 664 citations

Engineering, Microscopy, Electron Diffraction +16

Electronic traps and <i>P</i> <i>b</i> centers at the Si/SiO2 interface: Band-gap energy distribution

Edward H. Poindexter, G. J. Gerardi, M.-E. Rueckel et al. · Journal of Applied Physics · 1984 · 390 citations

Semiconductors, Engineering, Physics +12

Luminescence studies of plasma-deposited hydrogenated silicon

R. A. Street, J. C. Knights, D. K. Biegelsen · Physical review. B, Condensed matter · 1978 · 337 citations

Luminescence Intensity, Photoluminescence, Engineering +14

Reconstructions of GaAs(1¯ 1¯ 1¯) surfaces observed by scanning tunneling microscopy

D. K. Biegelsen, R. D. Bringans, John E. Northrup et al. · Physical Review Letters · 1990 · 291 citations

Semiconductors, Materials Science, Ii-vi Semiconductor +15

Detailed investigation of doping in hydrogenated amorphous silicon and germanium

M. Stutzmann, D. K. Biegelsen, R. A. Street · Physical review. B, Condensed matter · 1987 · 287 citations

Materials Science, Engineering, Physics +14