Physical Review Letters · 1990 · 291 citations · 10 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsSemiconductor Crystal GrowthSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface CrystallographySurface PhysicsAtomic-scale Surface ImagingMicroscopyMolecular Beam EpitaxyScanning Electron MicroscopySurface StatesTunneling In SemiconductorsUnit Cell Geometry
We present scanning tunneling microscopy images of the As-rich (2\ifmmode\times\else\texttimes\fi{}2) and the Ga-rich (\ensuremath{\surd}19 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}19 ) reconstructions of the GaAs(1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{}) surface produced in situ by molecular-beam epitaxy. From the experimental results and total-energy calculations we show that the (2\ifmmode\times\else\texttimes\fi{}2) surface consists of As adatom trimers bonded to the underlying surface. The (\ensuremath{\surd}19 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}19 ) unit cell is dominated by a two-layer hexagonal ring.
10
Surface stoichiometry and structure of GaAs
John R. Arthur · Surface Science · 1974 · 330 citations
Natural Sciences, Materials Engineering, Materials Science +12