Edward H. Poindexter

Author

Also Known As

E H Poindexter, E Poindexter, E. H. POINDEXTER, E. H. Poindexter, E. Poindexter, E. Poindexter, Jr., E.H Poindexter, E.H. Poindexter, EDWARD H. POINDEXTER, EDWARD POINDEXTER

186

Publications

6.1K

Citations

H-Index

118

Concepts

All Affiliations

United States Department of the Army United States Army DEVCOM Army Research Laboratory Sandia National Laboratories William Paterson University

About

Edward H. Poindexter is an author at United States Department of the Army specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	73	5.3K
2	Natural Sciences	18	32	1.2K
3	Medicine	3	3	207
4	Public Health	2	2	47
5	Allergy	1	1	174

Edward H. Poindexter

Publications

5.7K

Citations

H-Index

Page 1

	Year	Citations
Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers Edward H. Poindexter, P. J. Caplan, Bruce E. Deal, Journal of Applied Physics EngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor DeviceSemiconductors	1981	555
ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers P. J. Caplan, Edward H. Poindexter, Bruce E. Deal, Journal of Applied Physics EngineeringSilicon On InsulatorSemiconductor DeviceEsr CentersSemiconductors	1979	462
The silicon-silicon dioxide system: Its microstructure and imperfections C. R. Helms, Edward H. Poindexter Reports on Progress in Physics Materials ScienceMaterials EngineeringMicrostructural FeaturesEngineeringPhysics	1994	406
Electronic traps and <i>P</i> <i>b</i> centers at the Si/SiO2 interface: Band-gap energy distribution Edward H. Poindexter, G. J. Gerardi, M.-E. Rueckel, Journal of Applied Physics SemiconductorsEngineeringPhysicsCrystalline DefectsElectronic Traps	1984	390
Interface traps and <i>P</i> <i>b</i> centers in oxidized (100) silicon wafers G. J. Gerardi, Edward H. Poindexter, P. J. Caplan, Applied Physics Letters Electrical EngineeringSilicon WafersEngineeringWafer Scale ProcessingPhysics	1986	321
Mechanism of negative-bias-temperature instability C. E. Blat, E. H. Nicollian, Edward H. Poindexter Journal of Applied Physics EngineeringTrivalent SiliconIntegrated CircuitsSilicon On InsulatorStability	1991	242
Characterization of Si/SiO2 interface defects by electron spin resonance Edward H. Poindexter, P. J. Caplan Progress in Surface Science SpintronicsEngineeringSi/sio2 Interface DefectsApplied PhysicsSilicene	1983	234
MOS interface states: overview and physicochemical perspective Edward H. Poindexter Semiconductor Science and Technology EngineeringIntegrated CircuitsChemistrySilicon On InsulatorInterface Chemistry	1989	230
Characteristic electronic defects at the Si-SiO2 interface N. M. Johnson, D. K. Biegelsen, M. D. Moyer, Applied Physics Letters SemiconductorsSpintronicsTrivalent Silicon DefectSemiconductor TechnologyEngineering	1983	185
The isolation of harmane and norharmane from tobacco and cigarette smoke Edward H. Poindexter, Robert D. Carpenter Phytochemistry Tobacco ControlAllergyTobacco UseMedicineNicotine	1962	174

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