P. J. Caplan

Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers

Edward H. Poindexter, P. J. Caplan, Bruce E. Deal et al. · Journal of Applied Physics · 1981 · 555 citations

Engineering, Integrated Circuits, Silicon On Insulator +17

ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers

P. J. Caplan, Edward H. Poindexter, Bruce E. Deal et al. · Journal of Applied Physics · 1979 · 462 citations

Engineering, Silicon On Insulator, Semiconductor Device +18

Electronic traps and <i>P</i> <i>b</i> centers at the Si/SiO2 interface: Band-gap energy distribution

Edward H. Poindexter, G. J. Gerardi, M.-E. Rueckel et al. · Journal of Applied Physics · 1984 · 390 citations

Semiconductors, Engineering, Physics +12

Interface traps and <i>P</i> <i>b</i> centers in oxidized (100) silicon wafers

G. J. Gerardi, Edward H. Poindexter, P. J. Caplan et al. · Applied Physics Letters · 1986 · 321 citations

Electrical Engineering, Silicon Wafers, Engineering +13

Characterization of Si/SiO2 interface defects by electron spin resonance

Edward H. Poindexter, P. J. Caplan · Progress in Surface Science · 1983 · 234 citations

Spintronics, Engineering, Si/sio2 Interface Defects +4