Applied Physics Letters · 1986 · 321 citations · 6 references
EngineeringMaterials SciencePhysicsCondensed Matter PhysicsMaterials PhysicsSemiconductor MaterialsSemiconductor DefectsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesWide-bandgap SemiconductorsBand Gap EnergyElectronic Band GapInterface Trap DensityInterface Trap Density MeasurementInterface TrapsSemiconductor CharacterizationSiliconTraps
The band-gap energy distribution of Pb centers on oxidized (100) Si wafers has been determined and compared with interface electrical trap density Dit. Two different Pb centers are observed on (100) Si: Pb0, which has the structure ⋅Si≡Si3, and is essentially identical to the sole Pb center observed on (111) Si; and Pb1, of presently uncertain identity, but clearly different in nature from Pb0. By electric field-controlled electron paramagnetic resonance (EPR) and capacitance-voltage (C-V) measurements, it is found that Pb0 has its (0↔1) electron transition at Ev+0.3 eV and its (1↔2) transition at Ev+0.85 eV. Similarly, Pb1 has its (0↔1) transition at Ev+0.45 eV and its (1↔2) transition at Ev+0.8 eV. The Pb band-gap density correlates qualitatively and quantitatively with the electrical trap density Dit from C-V analysis; nonbonded Pb orbitals are found to be the source of about 50% of the characteristic traps in dry-oxidized, unannealed (100) Si wafers.
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Characteristic electronic defects at the Si-SiO2 interface
N. M. Johnson, D. K. Biegelsen, M. D. Moyer et al. · Applied Physics Letters · 1983 · 187 citations