G. J. Gerardi

Electronic traps and <i>P</i> <i>b</i> centers at the Si/SiO2 interface: Band-gap energy distribution

Edward H. Poindexter, G. J. Gerardi, M.-E. Rueckel et al. · Journal of Applied Physics · 1984 · 390 citations

Semiconductors, Engineering, Physics +12

Interface traps and <i>P</i> <i>b</i> centers in oxidized (100) silicon wafers

G. J. Gerardi, Edward H. Poindexter, P. J. Caplan et al. · Applied Physics Letters · 1986 · 321 citations

Electrical Engineering, Silicon Wafers, Engineering +13

Structural identification of the silicon and nitrogen dangling-bond centers in amorphous silicon nitride

W. L. Warren, F. C. Rong, Edward H. Poindexter et al. · Journal of Applied Physics · 1991 · 78 citations

Magnetic Properties, Engineering, Magnetic Resonance +25

An electron paramagnetic resonance study of electron injected oxides in metal-oxide-semiconductor capacitors

L. Trombetta, G. J. Gerardi, D. J. DiMaria et al. · Journal of Applied Physics · 1988 · 68 citations

Semiconductors, Magnetism, Electrical Engineering +13

Electron paramagnetic resonance of conduction-band electrons in silicon

C. F. Young, Edward H. Poindexter, G. J. Gerardi et al. · Physical review. B, Condensed matter · 1997 · 56 citations

Electrical Engineering, Engineering, Physics +12