G. É. Frank-Kamenetskaya

Electron accumulation layer at the Cs-covered GaN(0001) n-type surface

G. V. Benemanskaya, V. S. Vikhnin, N. M. Shmidt et al. · Applied Physics Letters · 2004 · 25 citations

Wide-bandgap Semiconductor, Electrical Engineering, Visible Light +14

Near-Fermi level surface states induced by Cs adsorption on the Si(111)7 × 7 surface

G. V. Benemanskaya, G. É. Frank-Kamenetskaya, M. N. Lapushkin · Surface Science · 1995 · 12 citations

Materials Science, Cs Adsorption, Engineering +6

Changes in electronic and adsorption properties under Cs adsorption on GaAs in the transition from As-rich to Ga-rich surface

G. V. Benemanskaya, D. Daineka, G. É. Frank-Kamenetskaya · Surface Science · 2003 · 12 citations

Materials Science, Ii-vi Semiconductor, Cs Adsorption +7

Electronic Structure of the Ultrathin Cs/Si(100)-(2 × 1) and Cs/Si(111)-(7 × 7) Interfaces in the Threshold Energy Region

G. V. Benemanskaya, D. Daineka, G. É. Frank-Kamenetskaya · Surface Review and Letters · 1998 · 10 citations

Materials Science, Cs Coverage, Electronic Devices +14

Development of electronic band structure of the K-adsorbed Si(111)7 × 7 surface

G. V. Benemanskaya, D. Daineka, G. É. Frank-Kamenetskaya · Journal of Physics Condensed Matter · 1999 · 10 citations

Materials Science, Semiconductors, Surface Characterization +15