Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices

Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon

G. Masetti, M. Severi, S. Solmi · IEEE Transactions on Electron Devices · 1983 · 956 citations

Engineering, Electrical Engineering, Materials Science +17

Problems related to p-n junctions in silicon

W. Shockley · Solid-State Electronics · 1961 · 917 citations

Engineering, Materials Science, Physics +12

Measurement of the ionization rates in diffused silicon p-n junctions

R. Van Overstraeten, Harry de Man · Solid-State Electronics · 1970 · 824 citations

Engineering, Electrical Engineering, Materials Science +11

First-principles calculations of effective-mass parameters of AlN and GaN

Masakatsu Suzuki, Takeshi Uenoyama, Akira Yanase · Physical review. B, Condensed matter · 1995 · 631 citations

Natural Sciences, Materials Science, Physics +17

Ionization Rates for Electrons and Holes in Silicon

A. G. Chynoweth · Physical Review · 1958 · 580 citations

Natural Sciences, Physics, Electronic Materials +8