Takeshi Uenoyama - Concepedia

Author

Takeshi Uenoyama

Panasonic (Japan)

Also Known As

T Uenoyama, T. Uenoyama, Takeshi UENOYAMA, Takeshi Uenoyama, Takeshi Uenoyama Takeshi Uenoyama

Publications

2.6K

Citations

H-Index

Concepts

All Affiliations

Panasonic (Japan)Panasonic (China)Central Research Laboratories (United Kingdom)University of California San Diego

About

Takeshi Uenoyama is an author at Panasonic (Japan) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	27	2.4K
2	Applied Physics	18	27	2.4K
3	Electrical Engineering	11	12	1K
4	Natural Sciences	5	5	882
5	Chemistry	2	2	29

Takeshi Uenoyama

Publications

2.4K

Citations

H-Index

Page 1

	Year	Citations
Theoretical analysis of the effect of conduction band offset of window/CIS layers on performance of CIS solar cells using device simulation Takashi Minemoto, Takuya Matsui, Hideyuki Takakura, Solar Energy Materials and Solar Cells Device ModelingElectrical EngineeringEngineeringWindow/cis LayersCis Solar Cells	2001	633
First-principles calculations of effective-mass parameters of AlN and GaN Masakatsu Suzuki, Takeshi Uenoyama, Akira Yanase Physical review. B, Condensed matter Materials ScienceCubic ApproximationWide-bandgap SemiconductorAluminium NitrideEngineering	1995	622
Hole relaxation and luminescence polarization in doped and undoped quantum wells Takeshi Uenoyama, L. J. Sham Physical Review Letters EngineeringMagnetic ResonanceSpin DynamicSpin PhenomenonQuantum Materials	1990	148
Many-body theory of magneto-optical spectra in doped quantum wells Takeshi Uenoyama, L. J. Sham Physical review. B, Condensed matter Quantum ScienceExcited State PropertyPhotoluminescenceEngineeringSelf-energy Terms	1989	131
Effect of finite hole mass on edge singularities in optical spectra Takeshi Uenoyama, L. J. Sham Physical Review Letters PhotonicsOptical MaterialsEngineeringPhysicsOptical Properties	1990	100
Strain effect on electronic and optical properties of GaN/AlGaN quantum-well lasers Masakatsu Suzuki, Takeshi Uenoyama Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	1996	93
Carrier relaxation and luminescence polarization in quantum wells Takeshi Uenoyama, L. J. Sham Physical review. B, Condensed matter Quantum ScienceLuminescence PolarizationPhotoluminescenceEngineeringHole Momentum Relaxation	1990	93
Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers Masakatsu Suzuki, Takeshi Uenoyama Japanese Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorEngineeringPhysicsSemiconductor Lasers	1996	81
Optical Gain Calculation of Wurtzite GaN/AlGaN Quantum Well Laser Satoshi Kamiyama, K. Ohnaka, Masakatsu Suzuki, Japanese Journal of Applied Physics Wide-bandgap SemiconductorZincblende CrystalsOptical Gain CalculationAluminium NitrideEngineering	1995	60
Valence subband structures of wurtzite GaN/AlGaN quantum wells Takeshi Uenoyama, Masakatsu Suzuki Applied Physics Letters SemiconductorsValence Subband StructuresElectrical EngineeringWide-bandgap SemiconductorEngineering	1995	55

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