I. P. Nikitina

The influence of temperature treatment on the formation of Ni-based Schottky diodes and ohmic contacts to n-6H-SiC

M. G. Rastegaeva, A. N. Andreev, Alexander Petrov et al. · Materials Science and Engineering B · 1997 · 55 citations

Materials Science, Electrical Engineering, Engineering +7

Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates

M. G. Mynbaeva, Stephen E. Saddow, Galyna Melnychuk et al. · Applied Physics Letters · 2001 · 41 citations

Materials Engineering, Materials Science, Crystal Structure +12

High temperature measurements of metal contacts on epitaxial graphene

V. Karthik Nagareddy, I. P. Nikitina, D. Kurt Gaskill et al. · Applied Physics Letters · 2011 · 41 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Phase formation at rapid thermal annealing of Al/Ti/Ni ohmic contacts on 4H-SiC

Konstantin Vassilevski, Konstantinos Zekentes, K. Tsagaraki et al. · Materials Science and Engineering B · 2001 · 32 citations

Materials Engineering, Materials Science, Al/ti/ni Ohmic Contacts +12

Structural pattern formation in titanium–nickel contacts on silicon carbide following high-temperature annealing

I. P. Nikitina, Konstantin Vassilevski, A.B. Horsfall et al. · Semiconductor Science and Technology · 2006 · 28 citations

Engineering, Compound Contacts, Silicon Carbide +16