Galyna Melnychuk

Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates

M. G. Mynbaeva, Stephen E. Saddow, Galyna Melnychuk et al. · Applied Physics Letters · 2001 · 41 citations

Materials Engineering, Materials Science, Crystal Structure +12

Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation

Yaroslav Koshka, Huang-De Lin, Galyna Melnychuk et al. · Journal of Crystal Growth · 2006 · 35 citations

Materials Engineering, Gas Phase Nucleation, Materials Science +6

Low-temperature homoepitaxial growth of 4H–SiC with CH3Cl and SiCl4 precursors

Siva Kotamraju, Bharat Krishnan, Galyna Melnychuk et al. · Journal of Crystal Growth · 2009 · 26 citations

Materials Science, Materials Engineering, Low-temperature Homoepitaxial Growth +4

Effect of HCl addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperatures

Galyna Melnychuk, Siva Kotamraju, Yaroslav Koshka · Journal of Applied Physics · 2008 · 18 citations

Materials Science, Materials Engineering, Low Temperatures +13

Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC

Hrishikesh Das, Galyna Melnychuk, Yaroslav Koshka · Journal of Crystal Growth · 2010 · 11 citations

Materials Science, Materials Engineering, Engineering +5