Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation - Concepedia

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Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation

35

Citations

13

References

2006

Year

Yaroslav Koshka, Huang-De Lin, Galyna Melnychuk, C. E. C. Wood

Journal of Crystal Growth

Materials EngineeringGas Phase NucleationMaterials ScienceEngineeringGrowth RateApplied PhysicsCarbideEpitaxial GrowthMicrostructure

References

	Year	Citations

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