C. E. C. Wood

Planar-doped barriers in GaAs by molecular beam epitaxy

Rohit Malik, T. R. AuCoin, R. L. Ross et al. · Electronics Letters · 1980 · 247 citations

Electrical Engineering, Engineering, Rf Semiconductor +11

Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAs

C. E. C. Wood, G. Metze, Joseph D. Berry et al. · Journal of Applied Physics · 1980 · 240 citations

Engineering, Crystal Growth Technology, Arsenic Stabilized Conditions +17

Tin-doping effects in GaAs films grown by molecular beam epitaxy

C. E. C. Wood, B.A. Joyce · Journal of Applied Physics · 1978 · 180 citations

Materials Science, Semiconductors, Engineering +14

Surface and interface depletion corrections to free carrier-density determinations by hall measurements

Amitabh Chandra, C. E. C. Wood, D. W. Woodard et al. · Solid-State Electronics · 1979 · 172 citations

Materials Science, Surface Characterization, Engineering +9

The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs

Young G. Chai, Robert H. Chow, C. E. C. Wood · Applied Physics Letters · 1981 · 151 citations

Semiconductors, Materials Science, Electrical Engineering +12