Triangular defects in the low-temperature halo-carbon homoepitaxial growth of 4H-SiC

Step-controlled epitaxial growth of SiC: High quality homoepitaxy

Hiroyuki Matsunami, Tsunenobu Kimoto · Materials Science and Engineering R Reports · 1997 · 605 citations

Materials Science, Materials Engineering, Engineering +5

Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H-SiC{0001} vicinal surfaces

Tsunenobu Kimoto, Hiroyuki Matsunami · Journal of Applied Physics · 1994 · 169 citations

Materials Science, Surface Characterization, Nucleation Rate +12

Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers

J. A. Powell, J. B. Petit, James H. Edgar et al. · Applied Physics Letters · 1991 · 127 citations

Materials Engineering, Materials Science, Engineering +13

Crystal growth of SiC by step-controlled epitaxy

Tetsuzo Ueda, Hironori Nishino, Hiroyuki Matsunami · Journal of Crystal Growth · 1990 · 108 citations

Materials Science, Engineering, Applied Physics +3

Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

Henrik Pedersen, Stefano Leone, Anne Henry et al. · Journal of Crystal Growth · 2007 · 90 citations

Materials Engineering, Materials Science, Chemical Engineering +6