J. B. Petit

Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers

J. A. Powell, J. B. Petit, James H. Edgar et al. · Applied Physics Letters · 1991 · 127 citations

Materials Engineering, Materials Science, Engineering +13

Application of oxidation to the structural characterization of SiC epitaxial films

J. A. Powell, J. B. Petit, James H. Edgar et al. · Applied Physics Letters · 1991 · 96 citations · Full text

Materials Science, Materials Engineering, Structural Characterization +15

Comparison of interfacial and electronic properties of annealed Pd/SiC and Pd/SiO2/SiC Schottky diode sensors

Liang-Yü Chen, Gary W. Hunter, Philip G. Neudeck et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 70 citations

Engineering, Optoelectronic Devices, Electronic Properties +16

Measurement of <i>n</i>-type dry thermally oxidized 6H-SiC metal-oxide-semiconductor diodes by quasistatic and high-frequency capacitance versus voltage and capacitance transient techniques

Philip G. Neudeck, Soon-won Kang, J. B. Petit et al. · Journal of Applied Physics · 1994 · 41 citations · Full text

Materials Engineering, Semiconductor Technology, Electrical Engineering +13

Deep‐Level Dominated Electrical Characteristics of Au Contacts on β ‐ SiC

Kalyan Kumar Das, Hoyoul Kong, J. B. Petit et al. · Journal of The Electrochemical Society · 1990 · 18 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +14