Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers

Abstract

We have found that, with proper pregrowth surface treatment, 6H-SiC single-crystal films can be grown by chemical vapor deposition (CVD) at 1450 °C on vicinal (0001) 6H-SiC with tilt angles as small as 0.1°. Previously, tilt angles of greater than 1.5° were required to achieve 6H on 6H at this growth temperature. In addition, 3C-SiC could be induced to grow within selected regions on the 6H substrate. The 3C regions contained few (or zero) double-positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.