Applied Physics Letters · 1991 · 129 citations · 7 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsChemical Vapor DepositionCrystal GrowthEpitaxial GrowthSemiconductor Thin FilmsSilicon MaterialsThin-film MaterialsEpitaxial Film GrowthEpitaxial Thin-film GrowthFilm Growth MechanismsLow-temperature GrowthSilicon Carbide (Sic) MaterialsSurface GrowthTemperature-dependent GrowthThin-film Growth Mechanisms
We have found that, with proper pregrowth surface treatment, 6H-SiC single-crystal films can be grown by chemical vapor deposition (CVD) at 1450 °C on vicinal (0001) 6H-SiC with tilt angles as small as 0.1°. Previously, tilt angles of greater than 1.5° were required to achieve 6H on 6H at this growth temperature. In addition, 3C-SiC could be induced to grow within selected regions on the 6H substrate. The 3C regions contained few (or zero) double-positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.
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