W. J. Choyke

Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

T. Dalibor, Gerhard Pensl, H. Matsunami et al. · physica status solidi (a) · 1997 · 426 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

S. Strite, J. Ruan, Z. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 328 citations

Engineering, Materials Science, Physics +17

Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption

W. J. Choyke, D. R. Hamilton, Lyle Patrick · Physical Review · 1964 · 324 citations

Natural Sciences, Materials Science, Physics +17

Comparative electron spectroscopic studies of surface segregation on SiC(0001) and SiC(0001)

L. Muehlhoff, W. J. Choyke, M. J. Bozack et al. · Journal of Applied Physics · 1986 · 283 citations

Natural Sciences, Materials Engineering, Materials Science +12

Static Dielectric Constant of SiC

Lyle Patrick, W. J. Choyke · Physical review. B, Solid state · 1970 · 267 citations

Natural Sciences, Materials Engineering, Materials Science +13