J. Yang - Concepedia

Author

J. Yang

Case Western Reserve University ORCID

Also Known As

J. W. Yang, J. Yang, J.W. Yang, Jeong-Woo Yang, JiHyun Yang, Jihyun Yang, Young Rae Lee, Young Youl Hyun

Publications

738

Citations

H-Index

Concepts

All Affiliations

Case Western Reserve University Glenn Research Center University of Pittsburgh

About

J. Yang is an author at Case Western Reserve University specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	10	713
2	Materials Science	8	9	516
3	Applied Physics	7	8	506
4	Materials Engineering	7	8	687
5	Electrical Engineering	1	1	15

J. Yang

Publications

699

Citations

H-Index

Page 1

	Year	Citations
Polytypic transformations in SiC: the role of TEM P. Pirouz, J. Yang Ultramicroscopy Materials EngineeringEngineeringMicrostructureStructural CompositionPolytypic Transformations	1993	196
Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers J. A. Powell, J. B. Petit, James H. Edgar, Applied Physics Letters Materials EngineeringMaterials ScienceEngineeringSurface ScienceApplied Physics	1991	127
Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers J. A. Powell, David Larkin, L. G. Matus, Applied Physics Letters Materials EngineeringMaterials ScienceEngineeringCvd GrowthSurface Science	1990	125
Application of oxidation to the structural characterization of SiC epitaxial films J. A. Powell, J. B. Petit, James H. Edgar, Applied Physics Letters Materials ScienceMaterials EngineeringStructural CharacterizationSi FaceEngineering	1991	96
Growth of improved quality 3C-SiC films on 6H-SiC substrates J. A. Powell, David Larkin, L. G. Matus, Applied Physics Letters Materials EngineeringMaterials ScienceHigh Density6H-sic SubstratesEngineering	1990	52
The α → β polytypic transformation in high-temperature indented SiC J. Yang, P. Pirouz Journal of materials research/Pratt's guide to venture capital sources Materials ScienceMaterials EngineeringEngineeringMechanical EngineeringApplied Physics	1993	35
Growth of 2<i>H</i>-SiC on 6<i>H</i>-SiC by pulsed laser ablation M.A. Stan, Martin O. Patton, J. D. Warner, Applied Physics Letters Materials ScienceMaterials EngineeringEngineeringApplied PhysicsLaser Applications	1994	28
III-nitride transistors with capacitively coupled contacts G. Simin, Zijiang Yang, A. Koudymov, Applied Physics Letters C3 DeviceWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesC3 Design	2006	15
Anti-Site Bonds and the Structure of Interfaces in SiC P. Pirouz, J. Yang MRS Proceedings Materials ScienceInterface StructureInterface PropertyCarbideAnti-site Bonds	1990	14
Stress-Induced Polytypic Transformation in Sic J. Yang, Tetsuya Suzuki, P. Pirouz, MRS Proceedings Materials ScienceEngineeringStressMechanical EngineeringStressstrain Analysis	1992	11

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