Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates - Concepedia

Concepedia

Publication | Closed Access

Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates

81

Citations

31

References

1997

Year

W. G. Perry, Tsvetanka Zheleva, M. D. Bremser, R. F. Davis, W. Shan, J. J. Song

Journal of Electronic Materials

Materials ScienceAluminium NitrideWide-bandgap SemiconductorEngineeringApplied PhysicsAluminum Gallium NitrideExciton EnergiesGan Power DeviceGan FilmsBiaxial Strains

References

	Year	Citations

Page 1