W.K. Liu

Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate

Suman Datta, G. Dewey, J. M. Fastenau et al. · IEEE Electron Device Letters · 2007 · 89 citations

Ultrahigh-speed 0.5, Engineering, Integrated Circuits +16

Heterogeneous integration of enhancement mode in_0.7ga_0.3as quantum well transistor on silicon substrate using thin (les 2 μm) composite buffer architecture for high-speed and low-voltage ( 0.5 v) logic applications

Mantu K. Hudait, G. Dewey, Suman Datta et al. · 2007 · 71 citations

Si Substrate, Engineering, Device Integration +16

Monolithic integration of InP-based transistors on Si substrates using MBE

W.K. Liu, D. Lubyshev, J. M. Fastenau et al. · Journal of Crystal Growth · 2008 · 59 citations

Electrical Engineering, Wafer Scale Processing, Engineering +9

Wideband DHBTs using a graded carbon-doped InGaAs base

M. Dahlstrǒm, X. M. Fang, D. Lubyshev et al. · IEEE Electron Device Letters · 2003 · 42 citations

Semiconductors, Wideband Dhbts, Electrical Engineering +12

1.0 THz f_max InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

Vibhor Jain, Johann C. Rode, Han‐Wei Chiang et al. · 2011 · 20 citations