Monolithic integration of InP-based transistors on Si substrates using MBE

Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates

S. M. Ting, Eugene A. Fitzgerald · Journal of Applied Physics · 2000 · 159 citations

Engineering, Materials Engineering, Materials Science +17

The effect of substrate growth area on misfit and threading dislocation densities in mismatched heterostructures

Eugene A. Fitzgerald · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 119 citations

Engineering, Materials Engineering, Materials Science +17

Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

R. M. Sieg, Steven A. Ringel, S. M. Ting et al. · Journal of Electronic Materials · 1998 · 104 citations

Engineering, Materials Engineering, Materials Science +13

Smart-Cut® technology: from 300 mm ultrathin SOI production to advanced engineered substrates

Christophe Maleville, C. Mazuré · Solid-State Electronics · 2004 · 73 citations

Engineering, Materials Engineering, Materials Science +13

Wideband DHBTs using a graded carbon-doped InGaAs base

M. Dahlstrǒm, X. M. Fang, D. Lubyshev et al. · IEEE Electron Device Letters · 2003 · 42 citations

Engineering, Electrical Engineering, Materials Science +16