Mayank T. Bulsara

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Minjoo Larry Lee, Eugene A. Fitzgerald, Mayank T. Bulsara et al. · Journal of Applied Physics · 2004 · 951 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Coherent Phonon Heat Conduction in Superlattices

Maria N. Luckyanova, Jivtesh Garg, Keivan Esfarjani et al. · Science · 2012 · 597 citations

Engineering, Acoustic Metamaterial, Thermal Conductivity +16

Dislocation dynamics in relaxed graded composition semiconductors

Eugene A. Fitzgerald, A.Y Kim, M. T. Currie et al. · Materials Science and Engineering B · 1999 · 147 citations

Semiconductors, Engineering, Dislocation Interaction +5

Relaxed template for fabricating regularly distributed quantum dot arrays

Ya Xie, Srikanth Samavedam, Mayank T. Bulsara et al. · Applied Physics Letters · 1997 · 118 citations

Engineering, Integrated Circuits, Thin Film Process Technology +17

Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

John A. Carlin, Steven A. Ringel, Eugene A. Fitzgerald et al. · Applied Physics Letters · 2000 · 90 citations

Engineering, Semiconductor Materials, Optoelectronic Devices +19