Applied Physics Letters · 1997 · 118 citations · 6 references
EngineeringIntegrated CircuitsThin Film Process TechnologyQuantum ComputingRelaxed TemplateGe CoverageQuantum DotsQuantum EntanglementThin Film ProcessingMaterials SciencePhysicsCrystalline DefectsQuantum DeviceQuantum AlgorithmGe Growth TemperatureSemiconductor Device FabricationNatural SciencesSurface ScienceApplied PhysicsThin Films
Relaxed SiGe thin films are used as templates to control the nucleation of three-dimensional Ge islands on Si(100) substrates. Using the relaxed template, Ge islands form a rectangular array with all islands located exclusively above the intersections of dislocations. The registration is lost when the Ge growth temperature is lowered to 300 °C, and the Ge coverage is decreased to 0.4 nm.
6
Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
Y. W. Mo, D. E. Savage, B. S. Swartzentruber et al. · Physical Review Letters · 1990 · 1.4K citations
Engineering, Crystal Growth Technology, Silicon On Insulator +18
The single-electron transistor
M. A. Kastner · Reviews of Modern Physics · 1992 · 1K citations
Electrical Engineering, Engineering, Tunneling Microscopy +11