Relaxed template for fabricating regularly distributed quantum dot arrays

Abstract

Relaxed SiGe thin films are used as templates to control the nucleation of three-dimensional Ge islands on Si(100) substrates. Using the relaxed template, Ge islands form a rectangular array with all islands located exclusively above the intersections of dislocations. The registration is lost when the Ge growth temperature is lowered to 300 °C, and the Ge coverage is decreased to 0.4 nm.

References

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	Year	Citations
Dislocation-free Stranski-Krastanow growth of Ge on Si(100) D. J. Eaglesham, M. Cerullo Physical Review Letters Materials EngineeringMaterials ScienceEngineeringDislocation InteractionPhysics	1990	2K
Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001) Y. W. Mo, D. E. Savage, B. S. Swartzentruber, Physical Review Letters EngineeringCrystal Growth TechnologySilicon On InsulatorKinetic PathTunneling Microscopy	1990	1.4K
The single-electron transistor M. A. Kastner Reviews of Modern Physics Electrical EngineeringEngineeringTunneling MicroscopyPhysicsNanoelectronics	1992	1K
Use of misfit strain to remove dislocations from epitaxial thin films J. W. Matthews, A. E. Blakeslee, Sebastian Mäder Thin Solid Films Materials ScienceMisfit StrainEngineeringDislocation InteractionApplied Physics	1976	320
Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers N. Kirstaedter, Oliver G. Schmidt, N. N. Ledentsov, Applied Physics Letters PhotonicsQuantum ScienceQuantum PhotonicsEngineeringPhysics	1996	316
Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain Ya Xie, George H. Gilmer, Christopher Roland, Physical Review Letters EngineeringThin Film Process TechnologySemiconductorsSemiconductor Surface RoughnessBulk Strain	1994	255

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